Impact of Electron Injection and Temperature on Minority Carrier Transport in Alpha-Irradiated ß-Ga2O3 Schottky Rectifiers. (16th February 2019)

• Record Type: Journal Article
• Authors: Modak, Sushrut; Chernyak, Leonid; Khodorov, Sergey; Lubomirsky, Igor; Yang, Jiancheng; Ren, Fan; Pearton, Stephen J.
• Is Part Of: ECS journal of solid state science and technology. Volume 8:Number 7(2019)
• Page Start: Q3050
• Page End: Q3053
• Publication Date: 2019-02-16
• Subjects: Semiconductors -- alpha-particle exposure -- electron-injection -- Gallium oxide; Solid state chemistry -- Periodicals; Electronics -- Materials -- Periodicals; Electrochemistry -- Periodicals; 541.0421
• DOI: 10.1149/2.0101907jss
• Languages: English
• ISSNs: 2162-8777

Abstract

Abstract : The effect of electron injection on minority carrier transport in Si-doped β-Ga2 O3 Schottky rectifiers with 18 MeV alpha particle exposure (fluences of 10 12 –10 13 cm −2 ) was studied from room temperature to 120°C. Electron Beam-Induced Current technique in-situ in Scanning Electron Microscope was used to find the diffusion length of holes as a function of duration of electron injection and temperature for alpha-particle irradiated rectifiers and compared with non-irradiated reference devices. The activation energy for electron injection-induced effect on diffusion length for the alpha-particle irradiated sample was determined to be ∼ 49 meV as compared to ∼74 meV for the reference sample. The decrease in activation energy of the electron injection effect on diffusion length for irradiated sample is attributed to radiation-induced generation of additional shallow recombination centers closer to the conduction band edge.