60Co Gamma Ray Damage in Homoepitaxial β-Ga2O3 Schottky Rectifiers. (13th February 2019)

• Record Type: Journal Article
• Authors: Yang, Jiancheng; Koller, Gregory J.; Fares, Chaker; Ren, F.; Pearton, S. J.; Bae, Jinho; Kim, Jihyun; Smith, David J.
• Is Part Of: ECS journal of solid state science and technology. Volume 8:Number 7(2019)
• Page Start: Q3041
• Page End: Q3045
• Publication Date: 2019-02-13
• Subjects: Semiconductors -- Gallium Oxide -- radiation damage; Solid state chemistry -- Periodicals; Electronics -- Materials -- Periodicals; Electrochemistry -- Periodicals; 541.0421
• DOI: 10.1149/2.0091907jss
• Languages: English
• ISSNs: 2162-8777

Abstract

Abstract : β-Ga2 O3 Schottky rectifiers consisting of thick (10 μm) epitaxial drift regions on conducting substrates are shown to have a high tolerance to 60 Co gamma ray irradiation. This is due to the low carrier removal rate of <1 cm −1 for gamma rays, which contrasts to values of 300–500 cm −1 for MeV protons and alpha particles in the same rectifier structures. Changes in diode ideality factor, Schottky barrier height, on-resistance, on-off ratio, and reverse recovery time are all minimal for fluences up to 2 × 10 16 cm −2 (absorbed dose of 100 kGy (Si)). These results are consistent with previous reports on gamma-irradiation of Ga2 O3 metal oxide semiconductor field effect transistors (MOSFETs) where changes were ascribed to damage in the gate dielectric and not to the Ga2 O3 itself.