Communication—Co-Planar Structured Nano-Resistor Devices. (25th November 2019)

• Record Type: Journal Article
• Authors: Kuo, Yue; Zhang, Shumao
• Is Part Of: ECS journal of solid state science and technology. Volume 8:Number 12(2019)
• Page Start: Q223
• Page End: Q225
• Publication Date: 2019-11-25
• Subjects: Dielectrics - High-k -- Electron Devices -- Electron Devices - Silicon -- co-planar -- light emitting -- nano-resistor; Solid state chemistry -- Periodicals; Electronics -- Materials -- Periodicals; Electrochemistry -- Periodicals; 541.0421
• DOI: 10.1149/2.0071912jss
• Languages: English
• ISSNs: 2162-8777

Abstract

Abstract : Nano-resistor devices made from the hard breakdown of co-planar MOS capacitors have been fabricated and studied. The complete device was made of a 2-mask, self-aligned process and IC compatible thin film materials. Broadband white light was emitted from the device upon the application of a gate voltage larger than the breakdown voltage due to the thermal excitation of the nano-resistors. Optical characteristics of the co-planar structured device are similar to those of the nano-resistor device prepared from the non-coplanar MOS capacitor. A large number of co-planar nano-resistor devices can be fabricated into an array form on the same substrate and individual devices can be operated without being interfered by adjacent devices.