Atomic Layer Deposition and Performance of ZrO2-Al2O3 Thin Films. (24th May 2018)

• Record Type: Journal Article
• Authors: Kukli, Kaupo; Kemell, Marianna; Castán, Helena; Dueñas, Salvador; Seemen, Helina; Rähn, Mihkel; Link, Joosep; Stern, Raivo; Heikkilä, Mikko J.; Ritala, Mikko; Leskelä, Markku
• Is Part Of: ECS journal of solid state science and technology. Volume 7:Number 5(2018)
• Page Start: P287
• Page End: P294
• Publication Date: 2018-05-24
• Subjects: atomic layer deposition -- multilayers -- spintronics; Solid state chemistry -- Periodicals; Electronics -- Materials -- Periodicals; Electrochemistry -- Periodicals; 541.0421
• DOI: 10.1149/2.0021806jss
• Languages: English
• ISSNs: 2162-8777

Abstract

Abstract : Thin mixed and nanolaminate films of ZrO2 and Al2 O3 were grown by atomic layer deposition from the corresponding metal chlorides and water. The films were grown at 350°C in order to ensure ZrO2 crystallization in the as-deposited state. The relative thicknesses of layers in the structure of the nanolaminates were controlled in order to maximize the content of metastable polymorphs of ZrO2 that have higher permittivity than that of the stable monoclinic ZrO2 . The multilayer films demonstrated interfacial charge polarization and saturative magnetization in external fields. The conductivity of the films could be switched between high and low resistance states by applying voltages of alternating polarity.