Optimization of 7 nm Strained Germanium FinFET Design Parameters Using Taguchi Method and Pareto Analysis of Variance. (27th March 2018)

• Record Type: Journal Article
• Authors: Othman, N. A. F.; Azhari, F. N. N.; Hatta, S. F. Wan Muhamad; Soin, N.
• Is Part Of: ECS journal of solid state science and technology. Volume 7:Number 4(2018)
• Page Start: P161
• Page End: P169
• Publication Date: 2018-03-27
• Subjects: FinFET -- geometrical variations -- optimization; Solid state chemistry -- Periodicals; Electronics -- Materials -- Periodicals; Electrochemistry -- Periodicals; 541.0421
• DOI: 10.1149/2.0081804jss
• Languages: English
• ISSNs: 2162-8777

Abstract

Abstract : FinFET technology has emerged as an excellent alternative to planar MOSFET for sub-nanometer scaled technology processes in order to achieve high performance and low power. The geometrical parameters of FinFET are particularly sensitive to the devices' figure-of-merits. In this work, the effects of critical geometrical factors of the 7 nm strained germanium FinFET were systematically investigated by studying the resulting I-V characteristics, DIBL, and subthreshold swing. Variation of structure parameters are implemented and optimized using the Taguchi method signal-to-noise ratio with orthogonal arrays of L27 (3 13 ) as well as Pareto analysis of variance to obtain the best combinations of parameters for each response performance. The results reveals that the nominal threshold voltage achieved for n-FinFET and p-FinFET are 0.146V and −0.152V respectively. It was observed that design variations were shown to affect n-FinFET more compared to p-FinFET. Drive current can be increased up to approximately 22% for an optimized Ion performance, while leakage can be reduced up to 10 3 in Ioff optimization. Moreover, it is also observed from the Pareto analysis that the performance of FinFET is mainly affected by the dominant factors of fin length, top fin width, and the interaction of both for n- and p-FinFET by more than 50% for each response.