Cite
HARVARD Citation
Loo, R. et al. (2018). Editors' Choice—Epitaxial CVD Growth of Ultra-Thin Si Passivation Layers on Strained Ge Fin Structures. ECS journal of solid state science and technology. pp. P66-P72. [Online].
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Loo, R. et al. (2018). Editors' Choice—Epitaxial CVD Growth of Ultra-Thin Si Passivation Layers on Strained Ge Fin Structures. ECS journal of solid state science and technology. pp. P66-P72. [Online].