Post Plasma Oxidation Processed ALD Al2O3/Hf1-xZrxO2 Thin Films on Ge Substrates: Reliability. (12th January 2018)

• Record Type: Journal Article
• Authors: Bhuyian, M. N.; Shao, P.; Sengupta, A.; Ding, Y.; Misra, D.; Tapily, K.; Clark, R. D.; Consiglio, S.; Wajda, C. S.; Leusink, G. J.
• Is Part Of: ECS journal of solid state science and technology. Volume 7:Number 2(2018)
• Page Start: N1
• Page End: N6
• Publication Date: 2018-01-12
• Subjects: Solid state chemistry -- Periodicals; Electronics -- Materials -- Periodicals; Electrochemistry -- Periodicals; 541.0421
• DOI: 10.1149/2.0461712jss
• Languages: English
• ISSNs: 2162-8777

Abstract

Abstract : This work investigates the dielectric quality and interface properties of TiN/Hf1-x Zrx O2 /Al2 O3 /Ge gate stacks with six different Zr content (0%, 25%, 33%, 50%, 75%, and 100%). The dielectrics were subjected to Slot-Plane Antenna Plasma Oxidation (SPAO) after the ALD deposition process prior to metal deposition. The equivalent oxide thickness (EOT), flat-band voltage (VFB ), interface state density (Dit ), C-V hysteresis, and leakage current (I-V) behavior were analyzed. It was observed that EOT decreases with Zr addition in HfO2 with up to 75% of Zr incorporation. While the devices with up to 75% of Zr demonstrated lower C-V hysteresis, flat-band voltage shift and mid-gap Dit tend to increase with decrease in EOT. With 100% Zr incorporation EOT increased significantly while reducing the mid-gap Dit . This behavior is mostly dependent on GeOx –like interfacial layer formation and defects at the interface. Weibull plots shows that charge to breakdown (QBD ) increased with increase in the Zr percentage. However, the breakdown acceleration factor decreased with Zr percentage up to 75% and increased for 100% Zr content.