Cite
HARVARD Citation
Sudo, H. et al. (2019). Point Defect Reaction in Silicon Wafers by Rapid Thermal Processing at More Than 1300°C Using an Oxidation Ambient. ECS journal of solid state science and technology. pp. P35-P40. [Online].
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Sudo, H. et al. (2019). Point Defect Reaction in Silicon Wafers by Rapid Thermal Processing at More Than 1300°C Using an Oxidation Ambient. ECS journal of solid state science and technology. pp. P35-P40. [Online].