Atomic Layer Deposition and Properties of HfO2-Al2O3 Nanolaminates. (6th September 2018)

• Record Type: Journal Article
• Authors: Kukli, Kaupo; Kemell, Marianna; Castán, Helena; Dueñas, Salvador; Seemen, Helina; Rähn, Mihkel; Link, Joosep; Stern, Raivo; Ritala, Mikko; Leskelä, Markku
• Is Part Of: ECS journal of solid state science and technology. Volume 7:Number 9(2018)
• Page Start: P501
• Page End: P508
• Publication Date: 2018-09-06
• Subjects: atomic layer deposition -- multiferroic -- resistive switching; Solid state chemistry -- Periodicals; Electronics -- Materials -- Periodicals; Electrochemistry -- Periodicals; 541.0421
• DOI: 10.1149/2.0261809jss
• Languages: English
• ISSNs: 2162-8777

Abstract

Abstract : Nanocrystalline HfO2 :Al2 O3 mixture films and nanolaminates were grown by atomic layer deposition at 350°C from metal chloride precursors and water. Formation of metastable HfO2 polymorphs versus monoclinic phase was affected by the relative amount and thickness of constituent oxide layers. The films exhibited saturative magnetization and charge polarization in externally applied fields at room temperature. The films also demonstrated resistive switching behavior with considerable window between low and high resistance states.