Cite
HARVARD Citation
Fares, C. et al. (2018). Band Offsets for Atomic Layer Deposited HfSiO4 on (Al0.14Ga0.86)2O3. ECS journal of solid state science and technology. pp. P519-P523. [Online].
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Fares, C. et al. (2018). Band Offsets for Atomic Layer Deposited HfSiO4 on (Al0.14Ga0.86)2O3. ECS journal of solid state science and technology. pp. P519-P523. [Online].