Cite
HARVARD Citation
Lo, H. et al. (2017). Trade-Off between Gate Oxide Integrity and Transistor Performance for FinFET Technology. ECS journal of solid state science and technology. pp. N137-N141. [Online].
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Lo, H. et al. (2017). Trade-Off between Gate Oxide Integrity and Transistor Performance for FinFET Technology. ECS journal of solid state science and technology. pp. N137-N141. [Online].