Nanosecond Switching in Superlattice-Like GeTe/Sb Thin Film for High Speed and Low Power Phase Change Memory Application. (28th December 2016)

• Record Type: Journal Article
• Authors: Hu, Yifeng; Zhu, Xiaoqin; Zou, Hua; You, Haipeng; Zhai, Liangjun; Song, Sannian; Song, Zhitang
• Is Part Of: ECS journal of solid state science and technology. Volume 6:Number 1(2017)
• Page Start: P45
• Page End: P48
• Publication Date: 2016-12-28
• Subjects: high speed -- low power consumption -- phase change memory -- superlattice-like; Solid state chemistry -- Periodicals; Electronics -- Materials -- Periodicals; Electrochemistry -- Periodicals; 541.0421
• DOI: 10.1149/2.0191701jss
• Languages: English
• ISSNs: 2162-8777

Abstract

Abstract : Superlattice-like GeTe/Sb thin films were investigated for their potential application in phase change memory. Compared with monolayer GeTe thin film, GeTe/Sb thin film has lower crystallization temperature (208°C), crystallization activation energy (2.38 eV) and thermal conductivity (0.15 W/(m·K)). In GeTe/Sb thin film, GeTe and Sb phases exist independently. The superlattice-like structure is observed even after annealing at 250°C for 10 min. The shorter phase change time is achieved for GeTe/Sb thin film (4.3 ns). The GeTe/Sb-based phase change memory devices show an operation speed of as fast as 9 ns and a low RESET operation power of 4.09 × 10 −13 J.