Cite
HARVARD Citation
Fedeli, P. et al. (2016). 1950°C Post Implantation Annealing of Al+ Implanted 4H-SiC: Relevance of the Annealing Time. ECS journal of solid state science and technology. pp. P534-P539. [Online].
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Fedeli, P. et al. (2016). 1950°C Post Implantation Annealing of Al+ Implanted 4H-SiC: Relevance of the Annealing Time. ECS journal of solid state science and technology. pp. P534-P539. [Online].