Investigation of DC performance of Ge-source pocket silicon-on-insulator tunnel field effect transistor in nano regime. (6th May 2021)

• Record Type: Journal Article
• Authors: Sinha, Sanjeet Kumar; Chander, Sweta
• Is Part Of: International journal of nanoparticles. Volume 13:Number 1(2021)
• Page Start: 13
• Page End: 20
• Publication Date: 2021-05-06
• Subjects: tunnel field effect transistor -- TFET -- heterojunction -- homojunction -- subthreshold swing -- SOI-TFET; Nanotechnology -- Periodicals; 620.505
• Languages: English
• ISSNs: 1753-2507

Abstract

As devices are scaled down in nano regime the steepest subthreshold swing becomes the most desirable characteristic for the improvement of the performance of devices. To address this issue, tunnel field effect transistor is one of the promising candidates for replacing conventional MOS device. This paper investigates the impact of source pocket on switching behaviour of n-type Ge-source SOI-TFET and shows improvements in the device performance in terms of SS, ION, IOFF and ION /IOFF . The proposed device is compared with the homojunction SOI-TFET. The improved electrical characteristics of device are analysed on the basis of simulation results and justified by the theoretical concept. The device offers the steepest SS of 11 mV/decade, higher ION of 120 μA, and higher ION /IOFF ratio of 8.64 × 10 11 . The device characteristics are investigated by using TCAD tool.