A Graphene Switching Transistor for Vertical Circuit Design. (30th December 2015)

• Record Type: Journal Article
• Authors: Fahad, Md.; Srivastava, Ashok
• Is Part Of: ECS journal of solid state science and technology. Volume 5:Number 3(2016)
• Page Start: M13
• Page End: M21
• Publication Date: 2015-12-30
• Subjects: Electron Devices -- Graphene Transistor; Solid state chemistry -- Periodicals; Electronics -- Materials -- Periodicals; Electrochemistry -- Periodicals; 541.0421
• DOI: 10.1149/2.0051603jss
• Languages: English
• ISSNs: 2162-8777

Abstract

Abstract : A graphene switching transistor (GST) is proposed based on graphene-hexagonal boron nitride (hBN)-graphene vertical heterostructure. The carrier transport between source and drain is controlled by the shift in Fermi level in the channel from vertical interlayer tunneling between top and bottom graphene layers through three layers of hBN. Analytical current transport equation is derived and its characteristics are studied. GST operating at 0.1 V supply voltage gives a steep subthreshold slope of 2.97 mV/decade with an on/off current ratio of 2.45 × 10 4 . Drive current of 88 μA/μm 2 is estimated for an effective channel area of 0.05 μm 2 . The voltage transfer characteristic of GST-based vertical inverter is also studied and it is noted that for sharp transition from off to on state. The GST dissipates 15 times less dynamic power and 194 times less off state leakage power in comparison to a projected 2020 nMOSFET.