Enhanced Incorporation of P into Tensile-Strained GaAs1-yPy Layers Grown by Metal-Organic Vapor Phase Epitaxy at Very Low Temperatures. (20th January 2016)

• Record Type: Journal Article
• Authors: Guan, Yingxin; Forghani, Kamran; Schulte, K. L.; Babcock, Susan; Mawst, Luke; Kuech, T. F.
• Is Part Of: ECS journal of solid state science and technology. Volume 5:Number 3(2016)
• Page Start: P183
• Page End: P189
• Publication Date: 2016-01-20
• Subjects: GaAsP -- low temperature growth -- MOVPE -- surface kinetics -- tensile-strained layer; Solid state chemistry -- Periodicals; Electronics -- Materials -- Periodicals; Electrochemistry -- Periodicals; 541.0421
• DOI: 10.1149/2.0181603jss
• Languages: English
• ISSNs: 2162-8777

Abstract

Abstract : Metal-organic vapor phase epitaxy (MOVPE) of tensile-strained GaAs1-y Py layers on GaAs substrates was carried out over the temperature range from 380 to 650°C. The P content in the GaAs1-y Py epitaxial layers initially decreases with decreasing growth temperature from 550 to 650°C, while then exhibiting an increase with decreasing growth temperature from 550 to 380°C. Thermodynamic calculations indicate that P incorporation is far from thermodynamic equilibrium at all growth temperatures. Related surface kinetics for the anion incorporation competition are discussed and it is suggested that the P incorporation is assisted by the increased P surface coverage at low growth temperatures. GaAs1-y Py tensile strained layers with layer thickness exceeding the critical thickness exhibit an early stage of strain relaxation by the formation of cracks rather than misfit dislocations.