Review—Ionizing Radiation Damage Effects on GaN Devices. (24th November 2015)

• Record Type: Journal Article
• Authors: Pearton, S. J.; Ren, F.; Patrick, Erin; Law, M. E.; Polyakov, Alexander Y.
• Is Part Of: ECS journal of solid state science and technology. Volume 5:Number 2(2016)
• Page Start: Q35
• Page End: Q60
• Publication Date: 2015-11-24
• Subjects: GaN -- HEMTs -- LEDs -- radiation damage; Solid state chemistry -- Periodicals; Electronics -- Materials -- Periodicals; Electrochemistry -- Periodicals; 541.0421
• DOI: 10.1149/2.0251602jss
• Languages: English
• ISSNs: 2162-8777

Abstract

Abstract : Gallium Nitride based high electron mobility transistors (HEMTs) are attractive for use in high power and high frequency applications, with higher breakdown voltages and two dimensional electron gas (2DEG) density compared to their GaAs counterparts. Specific applications for nitride HEMTs include air, land and satellite based communications and phased array radar. Highly efficient GaN-based blue light emitting diodes (LEDs) employ AlGaN and InGaN alloys with different compositions integrated into heterojunctions and quantum wells. The realization of these blue LEDs has led to white light sources, in which a blue LED is used to excite a phosphor material; light is then emitted in the yellow spectral range, which, combined with the blue light, appears as white. Alternatively, multiple LEDs of red, green and blue can be used together. Both of these technologies are used in high-efficiency white electroluminescent light sources. These light sources are efficient and long-lived and are therefore replacing incandescent and fluorescent lamps for general lighting purposes. Since lighting represents 20–30% of electrical energy consumption, and because GaN white light LEDs require ten times less energy than ordinary light bulbs, the use of efficient blue LEDs leads to significant energy savings. GaN-based devices are more radiation hard than their Si and GaAs counterparts due to the high bond strength in III-nitride materials. The response of GaN to radiation damage is a function of radiation type, dose and energy, as well as the carrier density, impurity content and dislocation density in the GaN. The latter can act as sinks for created defects and parameters such as the carrier removal rate due to trapping of carriers into radiation-induced defects depends on the crystal growth method used to grow the GaN layers. The growth method has a clear effect on radiation response beyond the carrier type and radiation source. We review data on the radiation resistance of AlGaN/GaN and InAlN/GaN HEMTs and GaN–based LEDs to different types of ionizing radiation, and discuss ion stopping mechanisms. The primary energy levels introduced by different forms of radiation, carrier removal rates and role of existing defects in GaN are discussed. The carrier removal rates are a function of initial carrier concentration and dose but not of dose rate or hydrogen concentration in the nitride material grown by Metal Organic Chemical Vapor Deposition. Proton and electron irradiation damage in HEMTs creates positive threshold voltage shifts due to a decrease in the two dimensional electron gas concentration resulting from electron trapping at defect sites, as well as a decrease in carrier mobility and degradation of drain current and transconductance. State-of-art simulators now provide accurate predictions for the observed changes in radiation-damaged HEMT performance. Neutron irradiation creates more extended damage regions and at high doses leads to Fermi level pinning while 60 Co γ-ray irradiation leads to much smaller changes in HEMT drain current relative to the other forms of radiation. In InGaN/GaN blue LEDs irradiated with protons at fluences near 10 14 cm −2 or electrons at fluences near 10 16 cm −2, both current-voltage and light output-current characteristics are degraded with increasing proton dose. The optical performance of the LEDs is more sensitive to the proton or electron irradiation than that of the corresponding electrical performances.