Enhanced Field Emitter Base on Indium-Doped ZnO Nanostructures by Aqueous Solution. (26th October 2016)

• Record Type: Journal Article
• Authors: Liu, Y. H.; Chang, S. J.; Young, S. J.
• Is Part Of: ECS journal of solid state science and technology. Volume 5:Number 12(2016)
• Page Start: R203
• Page End: R205
• Publication Date: 2016-10-26
• Subjects: aqueous solution method -- field emitters -- Indium-doped ZnO nanostructures; Solid state chemistry -- Periodicals; Electronics -- Materials -- Periodicals; Electrochemistry -- Periodicals; 541.0421
• DOI: 10.1149/2.0101612jss
• Languages: English
• ISSNs: 2162-8777

Abstract

Abstract : In this study, indium doped ZnO (IZO) nanostructures were fabricated successfully on a glass substrate. It was found that the IZO nanostructures grown at room temperature were structurally uniform and well oriented with pure wurtzite structure. The composition of the doped zinc oxide (ZnO) nanostructures was confirmed by X-ray diffraction (XRD) and energy dispersive X-ray. The turn-on fields of ZnO and IZO nanostructures were 4.21 and 3.86 V/μm, and field enhancement factors (β) were 2695 and 5015, respectively. These results show that the field emission properties of the IZO nanostructures are better than those of ZnO nanostructures.