Effect of Ultrathin Silicon Oxide Film for Enhanced Performance and Reliability of Metal-Induced Laterally Crystallized Thin-Film Transistors Using Silicon Nitride as a Gate Dielectric. (27th October 2016)

• Record Type: Journal Article
• Authors: Chae, Hee Jae; Kim, Hyung Yoon; Lee, Sol Kyu; Seok, Ki Hwan; Lee, Yong Hee; Kiaee, Zohreh; Joo, Seung Ki
• Is Part Of: ECS journal of solid state science and technology. Volume 5:Number 12(2016)
• Page Start: Q279
• Page End: Q283
• Publication Date: 2016-10-27
• Subjects: Metal Induced lateral Crystallization -- Surface treatment -- Thin Film Transistor; Solid state chemistry -- Periodicals; Electronics -- Materials -- Periodicals; Electrochemistry -- Periodicals; 541.0421
• DOI: 10.1149/2.0121614jss
• Languages: English
• ISSNs: 2162-8777

Abstract

Abstract : In this work, we successfully fabricated high performance and excellent reliability of metal-induced laterally crystallized (MILC) polycrystalline-silicon thin-film transistors (poly-Si TFTs) with various surface treatments. The MILC poly-Si TFTs using silicon nitride as a gate dielectric shows high grain-boundary and interface trap-density with the MILC poly-Si film. Therefore, several surface treatment techniques, including oxidizing silicon surface with HNO3, H2 SO4, and HCl, as well as N2 O plasma treatment, were investigated. Comparing the characteristics of the proposed MILC poly-Si TFTs, the N2 O plasma treated was the most effective, showing superior electrical performance and reliability to the other surface treatment methods. The role of the N2 O plasma is to insert nitrogen into the poly-Si surface, which causes a relaxation and passivation of the trap states by producing Si≡N strong bonds, while the surface treatments using acids simply oxidize Si atoms.