Structural and Electrical Investigation of MoS2 Thin Films Formed by Thermal Assisted Conversion of Mo Metal. (30th June 2016)

• Record Type: Journal Article
• Authors: Duffy, Ray; Foley, Patrick; Filippone, Bruno; Mirabelli, Gioele; O'Connell, Dan; Sheehan, Brendan; Carolan, Pat; Schmidt, Michael; Cherkaoui, Karim; Gatensby, Riley; Hallam, Toby; Duesberg, Georg; Crupi, Felice; Nagle, Roger; Hurley, Paul K.
• Is Part Of: ECS journal of solid state science and technology. Volume 5:Number 11(2016)
• Page Start: Q3016
• Page End: Q3020
• Publication Date: 2016-06-30
• Subjects: electron devices -- MoS2 -- resistivity -- thin-films -- TMDs; Solid state chemistry -- Periodicals; Electronics -- Materials -- Periodicals; Electrochemistry -- Periodicals; 541.0421
• DOI: 10.1149/2.0041611jss
• Languages: English
• ISSNs: 2162-8777

Abstract

Abstract : Large-area synthesis is of great demand for the preparation of high-performance transition-metal-dichalcogenides (TMD) devices, however there are only limited reports to date of device operation on large-area TMDs. In this work we fabricate MoS2 devices based on Thermal Assisted Conversion (TAC) of metal layers, and characterize the thin-films with material analysis combined with electrical device parameter extraction. Specifically we report on temperature dependent parameter extraction for Ti/Au contacts to MoS2 thin-films to determine sheet resistance (Rsh ), resistivity (ρ), and the activation energy (EA ) of on-state current flow. For undoped MoS2, ρ was determined to be 191 Ω.cm at 25°C. The activation energy of the on-state current was found to be 0.18 eV, pointing to the presence of deep levels in MoS2 .