The Effect of Low Energy Ion Implantation on MoS2. (2nd August 2016)

• Record Type: Journal Article
• Authors: Murray, Ryan; Haynes, Katherine; Zhao, Xueying; Perry, Scott; Hatem, Christopher; Jones, Kevin
• Is Part Of: ECS journal of solid state science and technology. Volume 5:Number 11(2016)
• Page Start: Q3050
• Page End: Q3053
• Publication Date: 2016-08-02
• Subjects: 2D Materials -- Doping -- Ion Implantation -- MoS2 -- TMDC -- XPS; Solid state chemistry -- Periodicals; Electronics -- Materials -- Periodicals; Electrochemistry -- Periodicals; 541.0421
• DOI: 10.1149/2.0111611jss
• Languages: English
• ISSNs: 2162-8777

Abstract

Abstract : The use of ultra low energy ion implantation is investigated as a doping method for MoS2 . 200 eV Cl and Ar implants at doses between 1 × 10 13 and 1 × 10 15 cm −2 were introduced into exfoliated MoS2 flakes. XPS results for Cl implants show a decrease in core peak binding energies for Mo3d and S2p with increasing dose, implying a p-doping effect. Implantation of MoS2 device channel regions is shown to reduce the channel's conductivity. However, isolated implantation of the contact region with low doses (1 × 10 13 cm −2 ) of Cl and Ar are shown to improve output characteristics by linearizing the IDS -VDS curves and by increasing current through the device. Cl was shown to be more effective than Ar at increasing the current, implying there is a potential chemical effect as well as damage effect. For higher doses (≥ 1 × 10 14 cm −2 ), the current through the device is reduced with increasing dose for both implant species. This report presents the as-implanted, unannealed results. Post-implantation anneals may be necessary to activate the dopants and fully realize the potential of this doping method.