Cite
HARVARD Citation
Nipoti, R. et al. (2016). Structural and Functional Characterizations of Al+ Implanted 4H-SiC Layers and Al+ Implanted 4H-SiC p-n Junctions after 1950°C Post Implantation Annealing. ECS journal of solid state science and technology. pp. P621-P626. [Online].