Impact of Anisotropic Thermal Stress on Behavior of Grown-In Defects during Si Crystal Growth from a Melt. (23rd August 2016)

• Record Type: Journal Article
• Authors: Kamiyama, Eiji; Abe, Yoshiaki; Banba, Hironori; Saito, Hiroyuki; Maeda, Susumu; Kuliev, Alexander; Iizuka, Masaya; Mukaiyama, Yuji; Sueoka, Koji
• Is Part Of: ECS journal of solid state science and technology. Volume 5:Number 10(2016)
• Page Start: P553
• Page End: P555
• Publication Date: 2016-08-23
• Subjects: anisotropic -- crystal growth -- grown-in defects -- point defect -- silicon -- thermal stress -- X-ray topography; Solid state chemistry -- Periodicals; Electronics -- Materials -- Periodicals; Electrochemistry -- Periodicals; 541.0421
• DOI: 10.1149/2.0011610jss
• Languages: English
• ISSNs: 2162-8777

Abstract

Abstract : Anisotropic thermal stress near the melt/solid interface during growth of a Si crystal from a melt significantly affects control of grown-in defects when the diameter of the growing crystal is large. This effect on the behavior of intrinsic point defects in a growing Si crystal with 300-mm diameter was investigated by calculations and experiments. One has to take into account this effect in the development of a crystal-pulling process for 450-mm-diameter defect-free Si crystals.