Studies on Electrical Properties of RF Sputtered Deposited Boron Carbon Nitride Thin Films. (21st February 2015)

• Record Type: Journal Article
• Authors: Prakash, Adithya; Sundaram, Kalpathy B.
• Is Part Of: ECS journal of solid state science and technology. Volume 4:Number 5(2015)
• Page Start: N25
• Page End: N29
• Publication Date: 2015-02-21
• Subjects: Solid state chemistry -- Periodicals; Electronics -- Materials -- Periodicals; Electrochemistry -- Periodicals; 541.0421
• DOI: 10.1149/2.0071505jss
• Languages: English
• ISSNs: 2162-8777

Abstract

Abstract : Boron carbon nitride (BCN) films were prepared by reactive magnetron sputtering from a B4 C target and deposited to make metal-insulator-metal (MIM) sandwich structures using aluminum as the top and bottom electrodes. BCN films were deposited at various N2 /Ar gas flow ratios, substrate temperatures. The electrical characterization of the MIM devices includes capacitance vs. voltage (C-V), current vs voltage, and breakdown voltage characteristics. The above characterizations were performed as a function of deposition parameters. By varying the nitrogen concentration in the deposited films and substrate deposition temperatures, the electrical properties of BCN can be tuned accordingly. BCN films having dielectric constant as low as 2.13 with high dielectric breakdown strength of 3.4 MV/cm and resistivity of 3 × 10 12 Ω.cm were achieved.