Growth of Ge Homoepitaxial Films by Metal-Organic Chemical Vapor Deposition Using t-C4H9GeH3. (17th March 2015)

• Record Type: Journal Article
• Authors: Suda, Kohei; Kijima, Takahiro; Ishihara, Seiya; Sawamoto, Naomi; Machida, Hideaki; Ishikawa, Masato; Sudoh, Hiroshi; Ohshita, Yoshio; Ogura, Atsushi
• Is Part Of: ECS journal of solid state science and technology. Volume 4:Number 5(2015)
• Page Start: P152
• Page End: P154
• Publication Date: 2015-03-17
• Subjects: Ge -- MOCVD -- MOVPE; Solid state chemistry -- Periodicals; Electronics -- Materials -- Periodicals; Electrochemistry -- Periodicals; 541.0421
• DOI: 10.1149/2.0191505jss
• Languages: English
• ISSNs: 2162-8777

Abstract

Abstract : Ge homoepitaxial films are grown at low growth temperature of 320°C by metal-organic chemical vapor deposition (MOCVD) using tertiarybutylgermane (t-C4 H9 GeH3 ). We also performed ab initio calculations in order to reveal the chemical reaction for the epitaxial growth. As the result, it was revealed that the t-C4 H9 GeH3 was most likely decomposed into germane (GeH4 ) and isobutene [CH2 =C(CH3 )2 ] through the β-hydrogen elimination. We considered that this chemical nature allowed the growth temperature as low as that obtained by GeH4 precursor with sufficiently suppressed C impurity incorporation.