Cite
HARVARD Citation
Chang, S. et al. (2015). Growth of GaN on Patterned Sapphire Substrate with High-Index Facets. ECS journal of solid state science and technology. pp. R159-R161. [Online].
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Chang, S. et al. (2015). Growth of GaN on Patterned Sapphire Substrate with High-Index Facets. ECS journal of solid state science and technology. pp. R159-R161. [Online].