Mechanism of GaN CMP Based on H2O2 Slurry Combined with UV Light. (6th February 2015)

• Record Type: Journal Article
• Authors: Wang, Jie; Wang, Tongqing; Pan, Guoshun; Lu, Xinchun
• Is Part Of: ECS journal of solid state science and technology. Volume 4:Number 3(2015)
• Page Start: P112
• Page End: P117
• Publication Date: 2015-02-06
• Subjects: Solid state chemistry -- Periodicals; Electronics -- Materials -- Periodicals; Electrochemistry -- Periodicals; 541.0421
• DOI: 10.1149/2.0191503jss
• Languages: English
• ISSNs: 2162-8777

Abstract

Abstract : Chemical mechanical polishing (CMP) of GaN(0001) with a H2 O2 -SiO2 -based slurry is investigated in this paper. The result shows that an atomically flat surface with a roughness of 0.065 nm is obtained after polishing. Compared with a SiO2 -based slurry, the H2 O2 -SiO2 -based slurry can realize a higher material removal rate (MRR) and a better surface quality with less scratches. The pH value mainly affects the mean particle size of SiO2 and the chemical environment of the corrosion reaction with H2 O2, resulting in different MRRs. An off-site auxiliary polishing method is employed along with the H2 O2 -SiO2 -based polishing system using ultraviolet light to shine the outlet of slurry in order to catalyze the production of substance for oxidation, and it is proved to be efficient by improving the MRR to 103 nm/h. Physical and mathematic removal models are proposed to describe the removal mechanism of GaN CMP.