Resistance switching behaviors of continuous-thick hBN films fabricated by radio-frequency-sputtering. Issue 23 (14th December 2020)

• Record Type: Journal Article
• Authors: Li, Qiang; Qin, Xiao; Zhang, Qifan; Bai, Yunhe; Tang, Hua; Hu, Chenyu; Shen, Shuoheng; Li, Yufeng; Yun, Feng
• Is Part Of: Journal of materials research. Volume 35:Issue 23/24(2020)
• Page Start: 3247
• Page End: 3256
• Publication Date: 2020-12-14
• Subjects: resistive switching, -- hexagonal boron nitride, -- RF-sputtering technology; Materials -- Research -- Periodicals; 620.1105
• DOI: 10.1557/jmr.2020.315
• Languages: English
• ISSNs: 0884-2914

Abstract

Abstract: Abstract : Continuous hBN films have been grown by means of a radio-frequency-sputtering technology, and their material properties have been investigated. The prepared hBN films can achieve good smoothness in a large area. The surface morphologies and compositions of the hBN films on Si substrate and Al film have been characterized, indicating that there is no difference. The 101-phase peak of hBN film is the strongest, and the optical band gap of the fabricated film is 5.84 eV. An attempt on the fabrication of the hBN based resistive switching (RS) device has been made by using an Ag/hBN/Al structure, leading to the observation of a clear and stable RS behavior. The device exhibits a resistance window (high-resistivity state/low-resistivity state) of around 10 2, and the RS behaviors of hBN film prepared by sputtering were first observed. It has been found that the opening voltage for the device is changed when a different cycle voltage is applied because of the built-in electric field increasing with the increase of applied cycle voltage. The mechanism of the RS behavior has been analyzed, which lay a foundation for the application of hBN as RS material in resistive random access memory to improve the storage density.