Homoepitaxial ZnO/ZnMgO Laser Structures and Their Properties. Issue 1 (4th October 2020)

• Record Type: Journal Article
• Authors: Teisseyre, Henryk; Jarosz, Dawid; Marona, Lucja; Bojarska, Agata; Ivanov, Vitalii; Perlin, Piotr; Czyszanowski, Tomasz
• Other Names: Kuznetsov Andrej guestEditor.; Dangtip Somsak guestEditor.; Intarasiri Saweat guestEditor.
• Is Part Of: Physica status solidi. Volume 218:Issue 1(2021)
• Page Start: n/a
• Page End: n/a
• Publication Date: 2020-10-04
• Subjects: lasers -- optically pumped semiconductor lasers -- oxides -- quantum structures -- stimulated emission; Solid state physics -- Periodicals; Solids -- Industrial applications -- Periodicals; 530.41
• DOI: 10.1002/pssa.202000344
• Languages: English
• ISSNs: 1862-6300

Abstract

Abstract : Herein, the optically induced operation of ZnO‐based laser structures is reported, fabricated with plasma‐assisted molecular beam epitaxy (PA‐MBE) on native ZnO substrate. ZnMgO is used both to confine the optical mode within ZnO waveguide and to form quantum barriers of ZnO quantum wells. The resonator of these devices is defined by reactive ion etching (RIE) with a chlorine/argon plasma. The lowest laser threshold is measured to be approximately 0.4 MW cm −2 at room temperature when excited via the third harmonic of a YAG:Nd (355 nm). It is observed that the mode spacing depends on both the resonator length and the excitation power density, which is explained by introducing plasmonic corrections to the waveguide refractive index. Abstract : It is known that growth on native ZnO substrates ensures a better layer quality and lowering threading dislocations density. ZnO/ZnMgO‐based laser structures are deposited on a single crystal ZnO using plasma‐assisted molecular beam epitaxy. The lowest laser threshold is 0.4 MW cm −2 . The mode spacing depends on both the resonator length and the excitation power, which is explained by introducing plasmonic corrections to the waveguide refractive index.