Recent Progress of Deep Ultraviolet Photodetectors using Amorphous Gallium Oxide Thin Films. Issue 1 (14th October 2020)

• Record Type: Journal Article
• Authors: Liang, Huili; Han, Zuyin; Mei, Zengxia
• Other Names: Kuznetsov Andrej guestEditor.; Dangtip Somsak guestEditor.; Intarasiri Saweat guestEditor.
• Is Part Of: Physica status solidi. Volume 218:Issue 1(2021)
• Page Start: n/a
• Page End: n/a
• Publication Date: 2020-10-14
• Subjects: amorphous gallium oxide -- flexible electronics -- thin films -- ultraviolet photodetectors; Solid state physics -- Periodicals; Solids -- Industrial applications -- Periodicals; 530.41
• DOI: 10.1002/pssa.202000339
• Languages: English
• ISSNs: 1862-6300

Abstract

Abstract : Deep ultraviolet (UV) photodetectors have wide applications both in civil and military fields. Many materials have been explored to realize deep UV photodetection. Amorphous gallium oxide (a‐GaO x ), as a member of transparent amorphous oxide semiconductors (TAOSs), has attracted a great deal of attention due to its ultrawide bandgap and scalable synthesis at room temperature. Plenty of researches have been focused on this topic in recent years. Herein, the latest progresses in the preparation methods of a‐GaO x using radio‐frequency sputtering, pulsed laser deposition, atomic layer deposition, and other deposition techniques are summarized. Dependence of the stoichiometry, crystallinity, optical, electrical, and morphological properties on different preparation parameters and doping/alloying elements is tentatively discussed, as well as those deep UV photodetectors based on a‐GaO x and related thin films. Finally, a short summary with further possible investigations is provided for a better understanding and development of a‐GaO x materials and photodetectors. Abstract : Amorphous gallium oxide (a‐GaO x ) has attracted attention due to its outstanding ultraviolet (UV) photodetection performance. Herein, the main‐stream preparation methods for a‐GaO x films are summarized and this review also discusses how the growth process affects the material properties. Deep UV photodetectors with decent performance are also reviewed. These achievements may provide a better understanding and development of a‐GaO x materials and photodetectors.