In Situ Positron Annihilation Spectroscopy Analysis on Low‐Temperature Irradiated Semiconductors, Challenges and Possibilities. Issue 1 (2nd August 2020)

• Record Type: Journal Article
• Authors: Slotte, Jonatan; Kilpeläinen, Simo; Segercrantz, Natalie; Mizohata, Kenichiro; Räisänen, Jyrki; Tuomisto, Filip
• Other Names: Kuznetsov Andrej guestEditor.; Dangtip Somsak guestEditor.; Intarasiri Saweat guestEditor.
• Is Part Of: Physica status solidi. Volume 218:Issue 1(2021)
• Page Start: n/a
• Page End: n/a
• Publication Date: 2020-08-02
• Subjects: defects -- irradiation -- positron annihilation spectroscopy -- vacancies; Solid state physics -- Periodicals; Solids -- Industrial applications -- Periodicals; 530.41
• DOI: 10.1002/pssa.202000232
• Languages: English
• ISSNs: 1862-6300

Abstract

Abstract : A unique experimental setup at the Accelerator Laboratory of the University of Helsinki enables in situ positron annihilation spectroscopy (PAS) analysis on ion irradiated samples. In addition, the system enables temperature control (10–300 K) of the sample both during irradiation and during subsequent positron annihilation measurements. Using such a system for defect identification and annealing studies comes with a plethora of possibilities for elaborate studies. However, the system also poses some restrictions and challenges to these possibilities, both related to irradiation and to the PAS analysis. This review tries to address these issues. Abstract : Spectroscopies that can identify point defects in crystalline materials are scarce, even fewer techniques have the versatility of positron annihilation spectroscopy (PAS). In this Feature Article, the ways in which the unique experimental setup at the University of Helsinki is utilized to identify point defects in low‐temperature irradiated Ge and GaSb is presented.