A high‐efficiency 50 W X‐band GaN power amplifier in hybrid MIC technology. Issue 2 (30th November 2020)

• Record Type: Journal Article
• Authors: Ahmadi, Amirhossein; Moazzen, Hamidreza; Karimzadeh Baee, Roghieh; Sardrood, Parvin Sojoodi
• Is Part Of: International journal of RF and microwave computer-aided engineering. Volume 31:Issue 2(2021)
• Page Start: n/a
• Page End: n/a
• Publication Date: 2020-11-30
• Subjects: GaN‐die -- high efficiency -- high power -- matching networks -- power amplifier; Microwave devices -- Computer-aided design -- Periodicals; Computer-aided engineering -- Periodicals; 621.3813
• DOI: 10.1002/mmce.22506
• Languages: English
• ISSNs: 1096-4290

Abstract

Abstract: In this paper, the design, fabrication, and measurement results of a two‐stage X‐band highly efficient 50 W power amplifier are presented. In the design approach, two 0.25 μm bare‐die GaN on SiC transistors, where one of them has the largest gate periphery on the market, are chosen. A considerably high saturated power gain of more than 20 dB and better than 40% power‐added efficiency (PAE) are achieved over the 10.9 to 11.1 GHz bandwidth. Modulated measurements demonstrate an average output power of 40 W with good linearity specifications. Thermal assessment from measurement results ensures transistors' durability.