Anti‐Thermal‐Quenching Bi3+ Luminescence in a Cyan‐Emitting Ba2ZnGe2O7:Bi Phosphor Based on Zinc Vacancy. Issue 1 (3rd November 2020)

• Record Type: Journal Article
• Authors: Wei, Yi; Yang, Hang; Gao, Zhiyu; Yun, Xiaohan; Xing, Gongcheng; Zhou, Chenggang; Li, Guogang
• Is Part Of: Laser & photonics reviews. Volume 15:Issue 1(2021)
• Page Start: n/a
• Page End: n/a
• Publication Date: 2020-11-03
• Subjects: anti‐thermal‐quenching -- Bi3+ -- oxygen vacancy -- spectral adjustment -- zinc vacancy; Lasers -- Periodicals; Photonics -- Periodicals; Lasers -- Périodiques; Photonique -- Périodiques; 621.36
• DOI: 10.1002/lpor.202000048
• Languages: English
• ISSNs: 1863-8880

Abstract

Abstract: Thermal quenching (TQ) of phosphor is one of the biggest challenges to develop high‐quality white light‐emitting diodes ( w ‐LEDs). Herein, an anti‐thermal‐quenching (anti‐TQ) property in cyan‐emitting Ba2 ZnGe2 O7 :Bi 3+ phosphor is reported. At 150 °C, its emission intensity increases to 114% of the original intensity at 25 °C. Especially, the integrated emission intensity reaches 138%, 148%, and 134% at 150, 200, and 250 °C, respectively, by artificially creating zinc and oxygen vacancy defect. The anti‐TQ phenomenon is mainly attributed to high structure rigidity and strong ability to compensate emission loss during thermal generation process. Thermal‐induced emission compensation mainly stems from self‐oxidization behavior of Bi 2+ in zinc vacancy and the presence of oxygen vacancy defect. Oxygen vacancy is induced by native zinc vacancy and charge imbalance between Bi 3+ and Ba 2+ ions. The strategy to create oxygen vacancy defect and design self‐oxidization process of Bi opens a new insight to exploit anti‐TQ phosphors for high‐quality w ‐LEDs applications. Abstract : Anti‐thermal‐quenching luminescence is realized in Bi 3+ ‐activated melilite phosphors based on the coexistence of Bi 2+ ions and zinc vacancy defects, which opens a new insight to exploit anti‐TQ phosphors for high‐quality w ‐LEDs applications.