Growth and Characterization of Core-Shell Structures Consisting of GaN Nanowire Core and GaInN/GaN Multi-Quantum Shell. (29th October 2019)

• Record Type: Journal Article
• Authors: Kamiyama, Satoshi; Lu, Weifang; Takeuchi, Tetsuya; Iwaya, Motoaki; Akasaki, Isamu
• Is Part Of: ECS journal of solid state science and technology. Volume 9:Number 1(2020)
• Publication Date: 2019-10-29
• Subjects: Semiconductors - III-V -- GaN -- LED -- nanowire; Solid state chemistry -- Periodicals; Electronics -- Materials -- Periodicals; Electrochemistry -- Periodicals; 541.0421
• DOI: 10.1149/2.0252001JSS
• Languages: English
• ISSNs: 2162-8777

Abstract

Abstract : The growth of dislocation-free and uniform GaN nanowires and high emission efficiency in a GaInN/GaN multi-quantum shell (MQS) are demonstrated. Simultaneous-supply-mode metal-organic vapor phase epitaxy and a high growth temperature are applied, and uniform GaN nanowires are obtained without a too high Si doping concentration. The GaInN/GaN MQS grown on the n-GaN nanowire has a thickness variation in the height direction, possibly owing to the interplane diffusion of Ga atoms. The MQS exhibits distributed CL emission in the case of a too high Si doping concentration in the n-GaN nanowires. For further improvement of the optical property in the MQS, a low-temperature-grown thin AlGaN shell, located just below the MQS active region, is introduced, and 6 times higher CL intensity is observed.