Magnetic and structural properties of Fe-implanted GaN at room temperature. (February 2021)

• Record Type: Journal Article
• Authors: Li, Bingsheng; Peng, Dingping; Li, Junhan; Kang, Long; Zhang, Tongmin; Zhang, Zhenxing; Jin, Shuoxue; Cao, Xingzhong; Liu, Jihong; Wu, Lu; Wang, Xu; Fang, Zhongqiang; Zhou, Chunlin; Yang, Zhen; Krsjak, Vladimir
• Is Part Of: Vacuum. Volume 184(2021)
• Publication Date: 2021-02
• Subjects: GaN-Based diluted magnetic semiconductor -- Fe implantation -- Ferromagnetism -- Raman spectroscopy -- Positron annihilation spectroscopy; Vacuum -- Periodicals; 621.55
• DOI: 10.1016/j.vacuum.2020.109909
• Languages: English
• ISSNs: 0042-207X

Abstract

Abstract: GaN grown by metal-organic chemical vapour deposition on the sapphire substrate was implanted with 3 MeV Fe 10+ ions to fluences of 1 × 10 13 to 5 × 10 15 ions/cm 2 at room temperature. The change of magnetic property with the implantation fluence was measured by vibrating sample magnetometer. The structural features, including implantation-induced interstitials and vacancies, were studied by a combination of Raman spectroscopy, photoluminescence spectroscopy, transmission electron microscopy and positron annihilation technology. The ferromagnetic behaviour was observed in the as-grown sample, and the saturation magnetization reached the maximum after the Fe implantation to a fluence of 5× 10 13 ions/cm 2 . With increasing fluence, it decreased to be even smaller than that of the as-grown sample. The possible reasons are discussed. Highlights: Magnetic and structural properties of Fe-implanted GaN were investigated. . The N vacancies and dislocations can retard the Fe activation at Ga sites. Defect annealing would improve the saturation magnetization of Fe-implanted GaN.