Full Confinement of High‐Lying Triplet States to Achieve High‐Level Reverse Intersystem Crossing in Rubrene: A Strategy for Obtaining the Record‐High EQE of 16.1% with Low Efficiency Roll‐Off. (18th September 2020)
- Record Type:
- Journal Article
- Title:
- Full Confinement of High‐Lying Triplet States to Achieve High‐Level Reverse Intersystem Crossing in Rubrene: A Strategy for Obtaining the Record‐High EQE of 16.1% with Low Efficiency Roll‐Off. (18th September 2020)
- Main Title:
- Full Confinement of High‐Lying Triplet States to Achieve High‐Level Reverse Intersystem Crossing in Rubrene: A Strategy for Obtaining the Record‐High EQE of 16.1% with Low Efficiency Roll‐Off
- Authors:
- Tang, Xiantong
Pan, Ruiheng
Zhao, Xi
Jia, Weiyao
Wang, Ying
Ma, Caihong
Tu, Linyao
Xiong, Zuhong - Abstract:
- Abstract: A high‐level reverse intersystem crossing (HL‐RISC, T2 → S1 → S0 + hν ) process has recently been discovered as a promising route for achieving highly efficient organic light‐emitting diodes (OLEDs), but the prerequisites for the occurrence of HL‐RISC in rubrene is still vague and the reported external quantum efficiencies (EQEs) of rubrene‐doped OLEDs are typically limited to several percent. Herein, using the fingerprint magneto‐electroluminescence tools, it is found that the energy confinement of high‐lying triplet states (T2, rub ) is of great importance for the achievement of the HL‐RISC process. Namely, when the triplet energies of hosts satisfy the criterion of E (T1, host ) ≥ E (T2, rub ), the high‐level Dexter energy transfer channel (T1, host → T2, rub ) can facilitate the occurrence of HL‐RISC (T2, rub → S1, rub ) in rubrene. Most importantly, through selecting an exciplex with a high triplet energy as the co‐host for rubrene dopant so as to simultaneously utilize the HL‐RISC of the dopant and the RISC of the host, a record high EQE up to 16.1% is achieved and no obvious efficiency roll‐off is observed at high luminance due to the absence of triplet‐charge annihilation. Accordingly, this work not only deepens the physical understanding of this amazing HL‐RISC channel, but also provides a new direction for designing a series of highly efficient OLEDs. Abstract : Combining the high‐level reverse intersystem crossing (HL‐RISC) process of rubrene guests withAbstract: A high‐level reverse intersystem crossing (HL‐RISC, T2 → S1 → S0 + hν ) process has recently been discovered as a promising route for achieving highly efficient organic light‐emitting diodes (OLEDs), but the prerequisites for the occurrence of HL‐RISC in rubrene is still vague and the reported external quantum efficiencies (EQEs) of rubrene‐doped OLEDs are typically limited to several percent. Herein, using the fingerprint magneto‐electroluminescence tools, it is found that the energy confinement of high‐lying triplet states (T2, rub ) is of great importance for the achievement of the HL‐RISC process. Namely, when the triplet energies of hosts satisfy the criterion of E (T1, host ) ≥ E (T2, rub ), the high‐level Dexter energy transfer channel (T1, host → T2, rub ) can facilitate the occurrence of HL‐RISC (T2, rub → S1, rub ) in rubrene. Most importantly, through selecting an exciplex with a high triplet energy as the co‐host for rubrene dopant so as to simultaneously utilize the HL‐RISC of the dopant and the RISC of the host, a record high EQE up to 16.1% is achieved and no obvious efficiency roll‐off is observed at high luminance due to the absence of triplet‐charge annihilation. Accordingly, this work not only deepens the physical understanding of this amazing HL‐RISC channel, but also provides a new direction for designing a series of highly efficient OLEDs. Abstract : Combining the high‐level reverse intersystem crossing (HL‐RISC) process of rubrene guests with the RISC process of exciplex hosts in rubrene‐doped organic light‐emitting diodes can sufficiently convert non‐radiative triplet states into radiative singlet states and double the reported typical external quantum efficiencies up to the record‐high values of 16.1%. … (more)
- Is Part Of:
- Advanced functional materials. Volume 30:Number 51(2020)
- Journal:
- Advanced functional materials
- Issue:
- Volume 30:Number 51(2020)
- Issue Display:
- Volume 30, Issue 51 (2020)
- Year:
- 2020
- Volume:
- 30
- Issue:
- 51
- Issue Sort Value:
- 2020-0030-0051-0000
- Page Start:
- n/a
- Page End:
- n/a
- Publication Date:
- 2020-09-18
- Subjects:
- Dexter energy transfers -- external quantum efficiency -- organic light‐emitting diodes -- rubrene
Materials -- Periodicals
Chemical vapor deposition -- Periodicals
620.11 - Journal URLs:
- http://onlinelibrary.wiley.com/journal/10.1002/(ISSN)1616-3028 ↗
http://onlinelibrary.wiley.com/ ↗ - DOI:
- 10.1002/adfm.202005765 ↗
- Languages:
- English
- ISSNs:
- 1616-301X
- Deposit Type:
- Legaldeposit
- View Content:
- Available online (eLD content is only available in our Reading Rooms) ↗
- Physical Locations:
- British Library DSC - 0696.853900
British Library DSC - BLDSS-3PM
British Library HMNTS - ELD Digital store - Ingest File:
- 15342.xml