Controlling the morphology of solution-processed CuIn(SSe)2 absorber layers by film thickness and annealing temperature. (12th August 2020)

• Record Type: Journal Article
• Authors: Do, Quyen; Manh, Nguyen The; Triet, Luong Nguyen Dai; Choi, Yura; Lee, Young-Woo; Cho, Yonghyun; Lee, Kwang Jae; Cho, Namchul
• Is Part Of: Molecular crystals and liquid crystals. Volume 707(2020)
• Page Start: 126
• Page End: 139
• Publication Date: 2020-08-12
• Subjects: Absorber layers -- CISSe -- controlling morphology -- thin-film solar; Molecular crystals -- Periodicals; Liquid crystals -- Periodicals; Liquid crystals; Molecular crystals; Periodicals; 548
• DOI: 10.1080/15421406.2020.1743464
• Languages: English
• ISSNs: 1542-1406

Abstract

Abstract: We demonstrated the solution-processed CuIn(S, Se)2 solar cells using a diamine/dithiol cosolvent. Compared to the traditional CIGS materials made with the Selenization process, we fabricated CISSe films without the Selenization process. The crystallinity, optical properties, and morphology of the CIGSSe films were changed by annealing temperature and film thickness. The band gap energy were found approximately 1.5 eV with the different film thickness.