Photo-spin-voltaic effect in PtMn/Y3Fe5O12 thin films. (9th December 2020)

• Record Type: Journal Article
• Authors: Yadav, Roshni; Shepit, Michael; Li, Xu; Lin, Ko-Wei; van Lierop, Johan; Ruotolo, Antonio
• Is Part Of: Journal of physics. Volume 33:Number 9(2021)
• Publication Date: 2020-12-09
• Subjects: photo-spin-voltaic effect -- antiferromagnetic spintronics -- dual-ion-beam sputtering deposition; Condensed matter -- Periodicals; Matière condensée -- Périodiques; Vaste stoffen; Vloeistoffen; Natuurkunde; Electronic journals; Computer network resources; 530.4105
• DOI: 10.1088/1361-648X/abc65a
• Languages: English
• ISSNs: 0953-8984

Abstract

Abstract: The photo-spin-voltaic effect is revealed by the presence of a spin voltage generated by photons when a non-magnetic metal (e.g., Pt) is in close proximity to a ferrimagnetic insulator (e.g., Y3 Fe5 O12 (YIG)). This is attributed to the excited electrons and holes diffusing from the proximized layer near the interface to the metallic surface. By using a dual-ion-beam sputtering deposition technique, a metallic PtMn layer was deposited on YIG /Gd3 Ga5 O12 (GGG) (111) substrates. We report on the photo-induced-spin voltaic effect in a PtMn/YIG/GGG heterostructure. The sign of the photo-generated voltage was found to switch with magnetic field polarity and its intensity to decrease with increasing PtMn thickness. This indicates that spin-polarized electrons are confined near the interface in the metal. Photo-excitation of these carriers, together with spin–orbit coupling with Pt atoms, is at the origin of the measured transverse voltage. The design may find applications in antiferromagnetic spintronics.