Widely tunable direct bandgap of two-dimensional GeSe. (24th December 2020)

• Record Type: Journal Article
• Authors: Zhang, Yu; Wang, Xin-Xin; Shi, Li-Jie
• Is Part Of: Journal of physics. Volume 33:Number 11(2021)
• Publication Date: 2020-12-24
• Subjects: bandgap modulation -- strain -- electric field -- first-principles; Condensed matter -- Periodicals; Matière condensée -- Périodiques; Vaste stoffen; Vloeistoffen; Natuurkunde; Electronic journals; Computer network resources; 530.4105
• DOI: 10.1088/1361-648X/abba66
• Languages: English
• ISSNs: 0953-8984

Abstract

Abstract: Bulk GeSe is an indirect bandgap semiconductor. However, direct bandgap semiconductor of two-dimensional GeSe can be obtained by applying strain along armchair direction, and the direct bandgap can be tuned in a wide energy range from 0.86 eV to 0.00 eV by electric field. The bandgap modulation mechanism is studied in detail by first-principle calculations. The calculations of phonon spectra show that the crystal structure is relatively stable under the strain and electric field. Therefore, 2D GeSe is a promising material in frequency adjustable electronic and optical devices.