MoS2 FET fabrication using adhesion lithography and their application to chemical sensors. (21st December 2020)

• Record Type: Journal Article
• Authors: Ban, Takahiko; Ogura, Masaki; Yamamoto, Shin-ichi
• Is Part Of: Japanese journal of applied physics. Volume 60:Number 1(2021)
• Publication Date: 2020-12-21
• Subjects: adhesion lithography -- MoS2 FET -- sensors; Physics -- Periodicals; 621.05
• DOI: 10.35848/1347-4065/abcf5a
• Languages: English
• ISSNs: 0021-4922

Abstract

Abstract: Molybdenum disulfide (MoS2 ) field effect transistors (FETs) are investigated for chemical sensor applications. However, the formation of electrodes after a MoS2 transistor is transferred to the substrate results in process damage. In this work, MoS2 FETs are fabricated by implementing a gate, source, and drain pre-formation, and then by transferring MoS2 using polydimethylsiloxane. The fabricated FETs are characterized after their exposure to ethanol vapor as a case study for chemical sensor applications. A sub-threshold swing of 72 mV/dec can be observed for a fabricated FET with a field effect mobility of 5.05 cm 2 V −1 s −1 . The ON/OFF ratio is approximately 10 4 . No significant change in the FET's properties due to contact resistance is observed. Next, V th is shifted to a 1.7 V-positive value upon ethanol vapor exposure. By removing the ethanol vapor, a 1.4 V-negative shift in the threshold voltage value is observed compared with that before the ethanol vapor removal.