Bottom‐Up Fabrication of Semiconductive Metal–Organic Framework Ultrathin Films. Issue 10 (17th January 2018)

• Record Type: Journal Article
• Authors: Rubio‐Giménez, Víctor; Galbiati, Marta; Castells‐Gil, Javier; Almora‐Barrios, Neyvis; Navarro‐Sánchez, José; Escorcia‐Ariza, Garin; Mattera, Michele; Arnold, Thomas; Rawle, Jonathan; Tatay, Sergio; Coronado, Eugenio; Martí‐Gastaldo, Carlos
• Is Part Of: Advanced materials. Volume 30:Issue 10(2018)
• Page Start: n/a
• Page End: n/a
• Publication Date: 2018-01-17
• Subjects: electrical conductivity -- metal–organic frameworks -- self‐assembled monolayers -- ultrathin films; Materials -- Periodicals; Chemical vapor deposition -- Periodicals; 620.11
• DOI: 10.1002/adma.201704291
• Languages: English
• ISSNs: 0935-9648

Abstract

Abstract: Though generally considered insulating, recent progress on the discovery of conductive porous metal–organic frameworks (MOFs) offers new opportunities for their integration as electroactive components in electronic devices. Compared to classical semiconductors, these metal–organic hybrids combine the crystallinity of inorganic materials with easier chemical functionalization and processability. Still, future development depends on the ability to produce high‐quality films with fine control over their orientation, crystallinity, homogeneity, and thickness. Here self‐assembled monolayer substrate modification and bottom‐up techniques are used to produce preferentially oriented, ultrathin, conductive films of Cu‐CAT‐1. The approach permits to fabricate and study the electrical response of MOF‐based devices incorporating the thinnest MOF film reported thus far (10 nm thick). Abstract : Preferably oriented, ultrathin, semiconductive films of the metal–organic framework (MOF) Cu‐CAT‐1 are formed by using self‐assembled monolayer substrate modification and bottom‐up techniques. The approach enables fabrication and study of the electrical response of MOF‐based devices incorporating the thinnest MOF film reported thus far (10 nm thick).