Si/Ge (111) Semicoherent Interfaces: Responses to an In‐Plane Shear and Interactions with Lattice Dislocations. Issue 12 (31st August 2020)

• Record Type: Journal Article
• Authors: Xu, Shuozhi; Li, Yang; Chen, Youping
• Is Part Of: Physica status solidi. Volume 257:Issue 12(2020)
• Page Start: n/a
• Page End: n/a
• Publication Date: 2020-08-31
• Subjects: dislocation/interface interactions -- germanium -- in-plane shear -- semicoherent interfaces -- silicon; Solid state physics -- Periodicals; Solids -- Periodicals; Atomic structure -- Periodicals; 530.41
• DOI: 10.1002/pssb.202000274
• Languages: English
• ISSNs: 0370-1972

Abstract

Abstract : Concurrent atomistic–continuum simulations are employed to study Si/Ge (111) semicoherent interfaces in terms of their responses to an in‐plane shear and interactions with lattice dislocations. Three types of Si/Ge interfaces, differing in interfacial structures and energy, are considered. Type I interface coincides with the shuffle‐set slip plane and contains a hexagonal network of edge dislocations. Type II and Type III interfaces both coincide with the glide‐set slip plane, yet they contain, respectively, a triangular and a hexagonal network of Shockley partial dislocations. The simulations show that among the three types of interfaces, 1) Type I interface is the least stable subject to an in‐plane shear and 2) Type III interface impedes the gliding of lattice dislocations the most significantly. Abstract : Three types of Si/Ge (111) interfacial structures, differing in interfacial structures and energy, are obtained using the concurrent atomistic–continuum method. Simulation results show that Type I and Type II interfaces have the highest and lowest interface energies, respectively, and Type III interface impedes the gliding of lattice dislocations more significantly than the other two.