Bolometric Effect in Bi2O2Se Photodetectors. Issue 43 (11th September 2019)

• Record Type: Journal Article
• Authors: Yang, Hang; Tan, Congwei; Deng, Chuyun; Zhang, Renyan; Zheng, Xiaoming; Zhang, Xiangzhe; Hu, Yuze; Guo, Xiaoxiao; Wang, Guang; Jiang, Tian; Zhang, Yi; Peng, Gang; Peng, Hailin; Zhang, Xueao; Qin, Shiqiao
• Is Part Of: Small. Volume 15:Issue 43(2019)
• Page Start: n/a
• Page End: n/a
• Publication Date: 2019-09-11
• Subjects: Bi2O2Se -- bolometric effect -- photodetectors; Nanotechnology -- Periodicals; Nanoparticles -- Periodicals; Microtechnology -- Periodicals; 620.5
• DOI: 10.1002/smll.201904482
• Languages: English
• ISSNs: 1613-6810

Abstract

Abstract: Bi2 O2 Se is emerging as a photosensitive functional material for optoelectronics, and its photodetection mechanism is mostly considered to be a photoconductive regime in previous reports. Here, the bolometric effect is discovered in Bi2 O2 Se photodetectors. The coexistence of photoconductive effect and bolometric effect is generally observed in multiwavelength photoresponse measurements and then confirmed with microscale local heating experiments. The unique photoresponse of Bi2 O2 Se photodetectors may arise from a change of hot electrons during temperature rises instead of photoexcited holes and electrons. Direct proof of the bolometric effect is achieved by real‐time temperature tracking of Bi2 O2 Se photodetectors under time evolution after light excitation. Moreover, the Bi2 O2 Se bolometer shows a high temperature coefficient of resistance (−1.6% K −1 ), high bolometric coefficient (−31 nA K −1 ), and high bolometric responsivity (>320 A W −1 ). These findings offer a new approach to develop bolometric photodetectors based on Bi2 O2 Se layered materials. Abstract : The coexistence of the photoconductive effect and bolometric effect in Bi2 O2 Se photodetectors is generally observed. Moreover, Bi2 O2 Se bolometer shows a high temperature coefficient of resistance (−1.6% K −1 ), high bolometric coefficient (−31 nA K −1 ), and high bolometric responsivity (>320 A W −1 ). These findings offer a new approach to develop bolometric photodetectors based on Bi2 O2 Se layered materials.