Characterization of dual‐junction III‐V on Si tandem solar cells with 23.7% efficiency under low concentration. (2nd April 2019)
- Record Type:
- Journal Article
- Title:
- Characterization of dual‐junction III‐V on Si tandem solar cells with 23.7% efficiency under low concentration. (2nd April 2019)
- Main Title:
- Characterization of dual‐junction III‐V on Si tandem solar cells with 23.7% efficiency under low concentration
- Authors:
- Veinberg‐Vidal, Elias
Vauche, Laura
Medjoubi, Karim
Weick, Clément
Besançon, Claire
Garcia‐Linares, Pablo
Datas, Alejandro
Kaminski‐Cachopo, Anne
Voarino, Philippe
Mur, Pierre
Decobert, Jean
Dupré, Cécilia - Abstract:
- Abstract: Monolithic two‐terminal III‐V on Si dual‐junction solar cells, designed for low concentration applications, were fabricated by means of surface‐activated direct wafer bonding. The III‐V top cell is a heterojunction formed by an n‐Ga0.5 In0.5 P emitter and a p‐Al0.2 Ga0.8 As base. An efficiency of 21.1 ± 1.5% at one sun and 23.7 ± 1.7% at 10 suns is demonstrated, which to our knowledge is the best dual‐junction two‐terminal III‐V on Si tandem cell efficiency reported to date under verified reference conditions. The I‐V characterization of these 1‐cm 2 tandem cells under concentration required the development of a new method using a single‐source multiflash solar simulator and not perfectly matched component cells, also known as pseudo‐isotypes, formed by Si single‐junction cells and optical filters. In addition, the spectrum of the pulsed solar simulator was measured using a high‐speed CMOS spectrometer, allowing the calculation of the spectral mismatch correction factor. Merging these two techniques results in the hybrid corrected pseudo‐isotype (HCPI) characterization method, which shows a fast and accurate performance with a simplified procedure based on a single‐source solar simulator. Pseudo‐isotypes are easily adaptable to new cell designs by simply using a different filter, hence allowing the characterization of new multijunction solar cell architectures. Abstract : Monolithic two‐terminal (2 T) III‐V on Si dual‐junction (2 J) solar cells, designed for lowAbstract: Monolithic two‐terminal III‐V on Si dual‐junction solar cells, designed for low concentration applications, were fabricated by means of surface‐activated direct wafer bonding. The III‐V top cell is a heterojunction formed by an n‐Ga0.5 In0.5 P emitter and a p‐Al0.2 Ga0.8 As base. An efficiency of 21.1 ± 1.5% at one sun and 23.7 ± 1.7% at 10 suns is demonstrated, which to our knowledge is the best dual‐junction two‐terminal III‐V on Si tandem cell efficiency reported to date under verified reference conditions. The I‐V characterization of these 1‐cm 2 tandem cells under concentration required the development of a new method using a single‐source multiflash solar simulator and not perfectly matched component cells, also known as pseudo‐isotypes, formed by Si single‐junction cells and optical filters. In addition, the spectrum of the pulsed solar simulator was measured using a high‐speed CMOS spectrometer, allowing the calculation of the spectral mismatch correction factor. Merging these two techniques results in the hybrid corrected pseudo‐isotype (HCPI) characterization method, which shows a fast and accurate performance with a simplified procedure based on a single‐source solar simulator. Pseudo‐isotypes are easily adaptable to new cell designs by simply using a different filter, hence allowing the characterization of new multijunction solar cell architectures. Abstract : Monolithic two‐terminal (2 T) III‐V on Si dual‐junction (2 J) solar cells, designed for low concentration applications, were fabricated by means of surface‐activated bonding (SAB). An efficiency of 21.1 ± 1.5% at one sun and 23.7 ± 1.7% at 10 suns is demonstrated, which is the best 2 J 2 T III‐V on Si tandem cell efficiency reported to date under verified reference conditions. The I‐V characterization required the development of a new method using a single‐source multiflash solar simulator and not perfectly matched component cells, also known as pseudo‐isotypes. … (more)
- Is Part Of:
- Progress in photovoltaics. Volume 27:Number 7(2019)
- Journal:
- Progress in photovoltaics
- Issue:
- Volume 27:Number 7(2019)
- Issue Display:
- Volume 27, Issue 7 (2019)
- Year:
- 2019
- Volume:
- 27
- Issue:
- 7
- Issue Sort Value:
- 2019-0027-0007-0000
- Page Start:
- 652
- Page End:
- 661
- Publication Date:
- 2019-04-02
- Subjects:
- component cells -- III‐V on silicon tandem solar cells -- isotypes -- I‐V characterization -- low concentration photovoltaics (LCPV) -- multijunction -- pulsed multiflash solar simulator
Solar cells -- Periodicals
Photovoltaic cells -- Periodicals
Solar power plants -- Periodicals
621.31245 - Journal URLs:
- http://onlinelibrary.wiley.com/ ↗
- DOI:
- 10.1002/pip.3128 ↗
- Languages:
- English
- ISSNs:
- 1062-7995
- Deposit Type:
- Legaldeposit
- View Content:
- Available online (eLD content is only available in our Reading Rooms) ↗
- Physical Locations:
- British Library DSC - 6873.060000
British Library DSC - BLDSS-3PM
British Library STI - ELD Digital store - Ingest File:
- 15234.xml