Influence of charge emission behaviors of semi-conductive shielding layer on charge accumulation properties of insulation layer for HVDC cable. (9th December 2020)

• Record Type: Journal Article
• Authors: Wang, Tingting; Li, Xuejing; Liu, Mingyue; Li, Guochang; Xiao, Wei; Chen, Shaojie; Hao, Chuncheng; Wei, Yanhui; Fu, Mingli; Lei, Qingquan
• Is Part Of: Materials research express. Volume 7:Number 12(2020)
• Publication Date: 2020-12-09
• Subjects: CB particle -- charge injection property -- semi-conductive layer -- HVDC cable; Materials science -- Research -- Periodicals; Materials science -- Periodicals; 620.11
• DOI: 10.1088/2053-1591/abcf7b
• Languages: English
• ISSNs: 2053-1591

Abstract

Abstract: Space charge accumulation is one of the key factors restricting the manufacture and application of high-voltage direct current (HVDC) cables. Semi-conductive shielding layer plays an important role in uniform electric field in HVDC cable, and its own emission properties directly affect the space charge behaviours in the insulation material. In the paper, charge injection property from semi-conductive layer to insulation layer have been focused emphatically based on experiment and simulation. The charge injection characteristics of semi-conductive layer under two typical electrode configurations of 'Metal-Insulation layer-Metal' (M-I-M) and 'Semi-conductive layer-Insulation layer-Metal' (S-I-M) have been studied. The conductive current and depolarization current of the insulation layer are compared. Finally, effect of particle size and concentration of carbon black (CB) in the semi-conductive layer on the interfacial electric field has been studied by electric field simulation. The experimental results show that the charge injection from the semi-conductive layer is more obvious under the action of low electric field of 5 kV mm −1 due to effect of CB particles. It can be seen from the depolarizing current curve that the charge injection quantity with S-I interface is greater than that of M-I interface. Further calculation results show that the maximum distortion electric field increases slightly with the increase of CB size. When CB content is 25%, the electric field distortion caused by interface CB particles is about twice of the average electric field (5 kV mm −1 ), increasing from 9.61 kV mm −1 at 10 nm to 10.15 kV mm −1 at 50 nm. The reduction of CB size in the semi-conductive layer within a certain range is conducive to the reduction of the interface electric field. The maximum distortion field gradually decreases with the increase of CB content at a certain range.