Communication—The Impact of TaN Barrier Processes on Different Ultra Low-k Dielectrics. (20th October 2015)

• Record Type: Journal Article
• Authors: Zhang, Xunyuan; Gillot, Christophe; Zhao, Larry; Ryan, E. Todd; Wu, Chen
• Is Part Of: ECS journal of solid state science and technology. Volume 4:Number 12(2015)
• Page Start: N160
• Page End: N162
• Publication Date: 2015-10-20
• Subjects: BEOL Interconnect -- PEALD -- TaN -- ULK; Solid state chemistry -- Periodicals; Electronics -- Materials -- Periodicals; Electrochemistry -- Periodicals; 541.0421
• DOI: 10.1149/2.0241512jss
• Languages: English
• ISSNs: 2162-8777

Abstract

Abstract : TaN barriers were deposited by physical vapor and atomic layer deposition on different low-k dielectrics with dielectric constant values of 2.4, 2.55 and 2.7. The low-k damage introduced by different TaN processes was studied using metal-insulator-metal capacitors, where the k value was extracted from Capacitance-Voltage measurements. A plasma enhanced atomic layer deposition TaN process caused an increase of k value from 15% to 40% compared to physical vapor deposition TaN and thermal atomic layer deposition. Current-Voltage characteristics showed the presence of moisture impacting the behavior of plasma enhanced atomic layer deposition TaN samples corresponding to a severe plasma damage.