Selective Growth and In Situ Transfer of Graphene on GaN Using Patterned SiO2 Supporting Layers. (17th September 2015)

• Record Type: Journal Article
• Authors: Kwon, Hye-Jin; Kang, Jang-Won; Hong, Sang-Hyun; Kim, Na-Yeong; Park, Seong-Ju
• Is Part Of: ECS journal of solid state science and technology. Volume 4:Number 12(2015)
• Page Start: M73
• Page End: M76
• Publication Date: 2015-09-17
• Subjects: chemical vapor deposition -- graphene -- in-situ transfer -- lithography -- selective growth; Solid state chemistry -- Periodicals; Electronics -- Materials -- Periodicals; Electrochemistry -- Periodicals; 541.0421
• DOI: 10.1149/2.0051512jss
• Languages: English
• ISSNs: 2162-8777

Abstract

Abstract : We report the selective growth and in-situ transfer of graphene on a gallium nitride layer in solution using patterned SiO2 supporting layers. The line-patterned multilayer graphene was selectively transferred onto a gallium nitride target substrate without producing the damage and defect in the graphene. Furthermore, the transfer yield of in-situ transferred graphene was greatly increased compared to that by the conventional transfer method and the adhesion of transferred graphene was also improved by in-situ transfer in solution.