Growth of GaN on {123¯5}-like Facets of Patterned Sapphire Substrate. (25th April 2017)

• Record Type: Journal Article
• Authors: Wu, Pei-Yu; Chen, Chien-Chih; Huang, Chia-Yen; Kuo, Hao-Chung; Lin, Kun-Lin; Wu, YewChung Sermon
• Is Part Of: ECS journal of solid state science and technology. Volume 6:Number 5(2017)
• Page Start: Q68
• Page End: Q70
• Publication Date: 2017-04-25
• Subjects: GaN -- orientation relationship -- patterned sapphire substrate -- semi polar; Solid state chemistry -- Periodicals; Electronics -- Materials -- Periodicals; Electrochemistry -- Periodicals; 541.0421
• DOI: 10.1149/2.0351705jss
• Languages: English
• ISSNs: 2162-8777

Abstract

Abstract : GaN has been grown on wet-etched patterned sapphire substrate (PSS) by metal-organic chemical vapor deposition. It has been found that GaN was initiated not only from bottom c-facet but also from E {123 ¯ 5} facets of hexagonal patterns /pyramids. In this study, a vacancy-PSS on c-plane sapphire was used to investigate the growth of GaN on the E-like facets (E1 and E2) of distorted pyramids. The results show that the orientation relationship between E1-GaN and sapphire is (11 ¯ 2 6 ¯ )GaN // (1 ¯ 102 ¯ )sapphire and [1121 ¯ ]GaN // [112 ¯ 0]sapphire . At the same time, that between E2-GaN and sapphire is (011 ¯ 4 ¯ )GaN // (33 ¯ 06 ¯ )sapphire and [022 ¯ 1]GaN // [112 ¯ 0]sapphire .