Cite
HARVARD Citation
Yang, W. et al. (2021). Negative differential resistance characteristics of GaN-based resonant tunneling diodes with quaternary AlInGaN as barrier. Semiconductor science and technology. p. . [Online].
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Yang, W. et al. (2021). Negative differential resistance characteristics of GaN-based resonant tunneling diodes with quaternary AlInGaN as barrier. Semiconductor science and technology. p. . [Online].