Thermal investigation of a phase change memory device at the nanoscale. Issue 3 (September 2016)

• Record Type: Journal Article
• Authors: Battaglia, Jean-Luc; De, Indrayush; Saci, Abdelhak; Kusiak, Andrzej; Sousa, Véronique
• Is Part Of: Journal of physics. Volume 745:Issue 3(2016)
• Publication Date: 2016-09
• Subjects: Physics -- Congresses; 530.5
• DOI: 10.1088/1742-6596/745/3/032098
• Languages: English
• ISSNs: 1742-6588

Abstract

Abstract: New technologies in non-volatile memories have been developed for several years based on phase-change alloys out of which, the most known is the Ge2 Sb2 Te5 . The thermal investigation of the microelectronics device at cell scale is relevant since the heat transfer is the main limiting aspect for the optimal functioning of the device. More particularly, the thermal resistance at interfaces between the constitutive materials is of primary importance. We implemented a scanning thermal microscopy experiment in the 3D mode that allowed to fully characterizing the thermal properties of the cell at the nanoscale. The results lead to understand the 3D heat diffusion in the cell and more particularly the role of the vertical and horizontal interfaces.